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| 书名： | GaN Transistors for Efficient Power Conversion | |
|---|---|---|
| 作者： | Lidow, Alex; Strydom, Johan; de Rooij, Michael | |
| 出版时间： | 2014-06-26 | |
| ISBN： | 9781118844762(P-ISBN) ，9781118844793(O-ISBN) | |
| 摘要： | ||
| 摘要： | ||
书目详情：
GaN Transistors for Efficient Power ConversionContentsForewordAcknowledgments1 GaN Technology Overview1.1 Silicon Power MOSFETs 1976-20101.2 The GaN Journey Begins1.3 Why Gallium Nitride?1.3.1 Band Gap Eg)1.3.2 Critical Field Ecrit)1.3.3 On-Resistance RDSon))1.3.4 The Two-Dimensional Electron Gas1.4 The Basic GaN Transistor Structure1.4.1 Recessed Gate Enhancement-Mode Structure1.4.2 Implanted Gate Enhancement-Mode Structure1.4.3 pGaN Gate Enhancement-Mode Structure1.4.4 Cascode Hybrid Enhancement-Mode Structure1.4.5 Reverse Conduction in HEMT Transistors1.5 Building a GaN Transistor1.5.1 Substrate Material Selection1.5.2 Growing the Heteroepitaxy1.5.3 Processing the Wafer1.5.4 Making Electrical Connection to the Outside World1.6 SummaryReferences2 GaN Transistor Electrical Characteristics2.1 Introduction2.2 Key Device Parameters2.2.1 Breakdown Voltage BVDSS) and Leakage Current IDSS)2.2.2 On-Resistance RDSon))2.2.3 Threshold Voltage VGSth) or Vth)2.3 Capacitance and Charge2.4 Reverse Conduction2.5 Thermal Resistance2.6 Transient Thermal Impedance2.7 SummaryReferences3 Driving GaN Transistors3.1 Introduction3.2 Gate Drive Voltage3.3 Bootstrapping and Floating Supplies3.4 dv/dt Immunity3.5 di/dt Immunity3.6 Ground Bounce3.7 Common Mode Current3.8 Gate Driver Edge Rate3.9 Driving Cascode GaN Devices3.10 SummaryReferences4 Layout Considerations for GaN Transistor Circuits4.1 Introduction4.2 Minimizing Parasitic Inductance4.3 Conventional Power Loop Designs4.4 Optimizing the Power Loop4.5 Paralleling GaN Transistors4.5.1 Paralleling GaN Transistors for a Single Switch4.5.2 Paralleling GaN Transistors for Half-Bridge Applications4.6 SummaryReferences5 Modeling and Measurement of GaN Transistors5.1 Introduction5.2 Electrical Modeling5.2.1 Basic Modeling5.2.2 Limitations of Basic Modeling5.2.3 Limitations of Circuit Modeling5.3 Thermal Modeling5.3.1 Improving Thermal Performance5.3.2 Modeling of Multiple Die5.3.3 Modeling of Complex Systems5.4 Measuring GaN Transistor Performance5.4.1 Voltage Measurement Requirements5.4.2 Current Measurement Requirement5.5 SummaryReferences6 Hard-Switching Topologies6.1 Introduction6.2 Hard-Switching Loss Analysis6.2.1 Switching Losses6.2.2 Output Capacitance COSS) Losses6.2.3 Gate Charge QG) Losses6.2.4 Reverse Conduction Losses PSD)6.2.5 Reverse Recovery QRR) Losses6.2.6 Total Hard-Switching Losses6.2.7 Hard-Switching Figure of Merit6.3 External Factors Impacting Hard-Switching Losses6.3.1 Impact of Common-Source Inductance6.3.2 Impact of High Frequency Power-Loop Inductance on Device Losses6.4 Reducing Body Diode Conduction Losses in GaN Transistors6.5 Frequency Impact on Magnetics6.5.1 Transformers6.5.2 Inductors6.6 Buck Converter Example6.6.1 Output Capacitance Losses6.6.2 Gate Losses PG)6.6.3 Body Diode Conduction Losses PSD)6.6.4 Switching Losses Psw)6.6.5 Total Dynamic Losses PDynamic)6.6.6 Conduction Losses PConduction)6.6.7 Total Device Hard-Switching Losses PHS)6.6.8 Inductor Losses PL)6.6.9 Total Buck Converter Estimated Losses PTotal)6.6.10 Buck Converter Loss Analysis Accounting for Common Source Inductance6.6.11 Experimental Results for the Buck Converter6.7 SummaryReferences7 Resonant and Soft-Switching Converters7.1 Introduction7.2 Resonant and Soft-Switching Techniques7.2.1 Zero-Voltage and Zero-Current Switching7.2.2 Resonant DC-DC Converters7.2.3 Resonant Network Combinations7.2.4 Resonant Network Operating Principles7.2.5 Resonant Switching Cells7.2.6 Soft-Switching DC-DC Converters7.3 Key Device Parameters for Resonant and Soft-Switching Applications7.3.1 Output Charge QOSS)7.3.2 Determining Output Charge from Manufacturers Datasheet7.3.3 Comparing Output Charge of GaN Transistors and Si MOSFETs7.3.4 Gate Charge QG)7.3.5 Determining Gate Charge for Resonant and Soft-Switching Applications7.3.6 Comparing Gate Charge of GaN Transistors and Si MOSFETs7.3.7 Comparing Performance Metrics of GaN Transistors and Si MOSFETs7.4 High-Frequency Resonant Bus Converter Example7.4.1 Resonant GaN and Si Bus Converter Designs7.4.2 GaN and Si Device Comparison7.4.3 Zero-Voltage Switching Transition7.4.4 Efficiency and Power Loss Comparison7.5 SummaryReferences8 RF Performance8.1 Introduction8.2 Differences Between RF and Switching Transistors8.3 RF Basics8.4 RF Transistor Metrics8.4.1 Determining the High-Frequency Characteristics of RF FETs8.4.2 Pulse Testing for Thermal Considerations8.4.3 Analyzing the S-Parameters8.5 Amplifier Design Using Small-Signal S-Parameters8.5.1 Conditionally Stable Bilateral Transistor Amplifier Design8.6 Amplifier Design Example8.6.1 Matching and Bias Tee Network Design8.6.2 Experimental Verification8.7 SummaryReferences9 GaN Transistors for Space Applications9.1 Introduction9.2 Failure Mechanisms9.3 Standards for Radiation Exposure and Tolerance9.4 Gamma Radiation Tolerance9.5 Single-Event Effects SEE) Testing9.6 Performance Comparison between GaN Transistors and Rad-Hard Si MOSFETs9.7 SummaryReferences10 Application Examples10.1 Introduction10.2 Non-Isolated DC-DC Converters10.2.1 12 VIN - 1.2 VOUT Buck Converter10.2.2 28 VIN - 3.3 VOUT Point-of-Load Module10.2.3 48 VIN - 12 VOUT Buck Converter with Parallel GaN Transistors for High-Current Applications10.3 Isolated DC-DC Converters10.3.1 Hard-Switching Intermediate Bus Converters10.3.2 A 400 V LLC Resonant Converter10.4 Class-D Audio10.4.1 Total Harmonic Distortion THD)10.4.2 Damping Factor DF)10.4.3 Class-D Audio Amplifier Example10.5 Envelope Tracking10.5.1 High-Frequency GaN Transistors10.5.2 Envelope Tracking Experimental Results10.5.3 Gate Driver Limitations10.6 Highly Resonant Wireless Energy Transfer10.6.1 Design Considerations for Wireless Energy Transfer10.6.2 Wireless Energy Transfer Examples10.6.3 Summary of Design Considerations for Wireless Energy Transfer10.7 LiDAR and Pulsed Laser Applications10.8 Power Factor Correction PFC)10.9 Motor Drive and Photovoltaic Inverters10.10 SummaryReferences11 Replacing Silicon Power MOSFETs11.1 What Controls the Rate of Adoption?11.2 New Capabilities Enabled by GaN Transistors11.3 GaN Transistors are Easy to Use11.4 Cost vs. Time11.4.1 Starting Material11.4.2 Epitaxial Growth11.4.3 Wafer Fabrication11.4.4 Test and Assembly11.5 GaN Transistors are Reliable11.6 Future Directions11.7 ConclusionReferencesAppendixIndexEnd User License Agreement
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